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PHP30NQ15T; PHB30NQ15T
N-channel enhancement mode field-effect transistor
Rev. 02 -- 12 March 2001 Product specification
1. Description
N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOSTM1 technology. Product availability: PHP30NQ15T in SOT78 (TO-220AB) PHB30NQ15T in SOT404 (D2-PAK).
2. Features
s Fast switching s Low on-state resistance.
3. Applications
s DC to DC converters s Switched mode power supplies.
c
4. Pinning information
c
Table 1: Pin 1 2 3 mb
Pinning - SOT78 and SOT404, simplified outline and symbol Description gate (g)
mb mb
Simplified outline
Symbol
drain (d) source (s) drain (d)
[1]
d
g 2 1
MBK106
3
MBK116
MBB076
s
123
SOT78 (TO-220AB)
[1] 1.
SOT404 (D2-PAK)
It is not possible to make connection to pin 2 of the SOT404 package. TrenchMOS is a trademark of Royal Philips Electronics.
Philips Semiconductors
PHP30NQ15T; PHB30NQ15T
N-channel enhancement mode field-effect transistor
5. Quick reference data
Table 2: Symbol VDS ID Ptot Tj RDSon Quick reference data Parameter drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance VGS = 10 V; ID = 15 A Conditions Tj = 25 to 175 C Tmb = 25 C; VGS = 10 V Tmb = 25 C Typ - - - - - Max 150 29 150 175 63 Unit V A W C m
6. Limiting values
Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VDGR VGS ID Parameter drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) Tmb = 25 C; VGS = 10 V; Figure 2 and 3 Tmb = 100 C; VGS = 10 V; Figure 2 IDM Ptot Tstg Tj IS ISM EAS IAS peak drain current total power dissipation storage temperature operating junction temperature source (diode forward) current (DC) Tmb = 25 C peak source (diode forward) current Tmb = 25 C; pulsed; tp 10 s non-repetitive avalanche energy non-repetitive avalanche current unclamped inductive load; IAS = 26 A; tp = 0.2 ms; VDD 25 V; RGS = 50 ; VGS = 10 V; starting Tj = 25 C; Figure 4 Tmb = 25 C; pulsed; tp 10 s; Figure 3 Tmb = 25 C; Figure 1 Conditions Tj = 25 to 175 C Tj = 25 to 175 C; RGS = 20 k Min - - - - - - - -55 -55 - - - - Max 150 150 20 29 20 116 150 +175 +175 29 116 502 29 Unit V V V A A A W C C A A mJ A
Source-drain diode
Avalanche ruggedness
9397 750 08037
(c) Philips Electronics N.V. 2001. All rights reserved.
Product specification
Rev. 02 -- 12 March 2001
2 of 14
Philips Semiconductors
PHP30NQ15T; PHB30NQ15T
N-channel enhancement mode field-effect transistor
120 Pder
(%)
03aa16
03aa24
120
Ider (%)
100
100
80
80
60
60
40
40
20
20
0 0 25 50 75 100 125 150 175 200
Tmb (oC)
0 0 25 50 75 100 125 150 175 200
Tmb (oC)
P tot P der = ---------------------- x 100% P
tot ( 25 C )
VGS 10 V ID I der = ------------------ x 100% I
D ( 25 C )
Fig 1. Normalized total power dissipation as a function of mounting base temperature.
103 ID (A) 102
003aaa055
Fig 2. Normalized continuous drain current as a function of mounting base temperature.
102 IAS
003aaa054
RDSon = VDS/ ID tp = 10 s
(A) 25 oC
10
10
100 s 1 ms D.C. Tj prior to avalanche = 150 oC
1
10 ms 100 ms
1
10-1 1 10 102 VDS (V) 103
10-1 10-3 10-2 10-1 1 tp (ms) 10
Tmb = 25 C; IDM is single pulse.
Unclamped inductive load; VDD 25 V; RGS = 50 ; VGS = 10 V; starting Tj = 25 C and 150 C.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
Fig 4. Non-repetitive avalanche ruggedness current as a function of pulse duration.
9397 750 08037
(c) Philips Electronics N.V. 2001. All rights reserved.
Product specification
Rev. 02 -- 12 March 2001
3 of 14
Philips Semiconductors
PHP30NQ15T; PHB30NQ15T
N-channel enhancement mode field-effect transistor
7. Thermal characteristics
Table 4: Symbol Rth(j-mb) Rth(j-a) Thermal characteristics Parameter Conditions Value 1 60 50 Unit K/W K/W K/W thermal resistance from junction to mounting Figure 5 base thermal resistance from junction to ambient SOT78 package; vertical in still air SOT404 package; mounted on printed circuit board; minimum footprint.
7.1 Transient thermal impedance
003aaa056
10 Zth(j-mb) (K/W) 1 = 0.5 0.2 10-1 0.1 0.05 0.02 10-2 Single Pulse
tp T t P
=
tp T
10-3 10-6 10-5 10-4 10-3 10-2 10-1 tp (s) 1
Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration.
9397 750 08037
(c) Philips Electronics N.V. 2001. All rights reserved.
Product specification
Rev. 02 -- 12 March 2001
4 of 14
Philips Semiconductors
PHP30NQ15T; PHB30NQ15T
N-channel enhancement mode field-effect transistor
8. Characteristics
Table 5: Characteristics Tj = 25 C unless otherwise specified Symbol V(BR)DSS VGS(th) Parameter drain-source breakdown voltage Conditions ID = 250 A; VGS = 0 V Min 150 Typ - Max - Unit V Static characteristics
gate-source threshold voltage ID = 1 mA; VDS = VGS; Figure 10 Tj = 25 C Tj = 175 C 2 1 - - - 3 - 0.05 - 0.02 4 - 10 500 100 V V A A nA
IDSS
drain-source leakage current
VGS = 0 V; VDS = 150 V Tj = 25 C Tj = 175 C
IGSS RDSon
gate-source leakage current drain-source on-state resistance
VDS = 0 V; VGS = 10 V VGS = 10 V; ID = 15 A; Figure 8 and 9 Tj = 25 oC Tj = 175 C
- - - - - - - - - - - -
60 - 55 10 20 2390 240 98 14 50 48 38 0.9 105 0.55
63 176 - - 27 - - - - - - - 1.2 -
m m nC nC nC pF pF pF ns ns ns ns V ns C
Dynamic characteristics Qg(tot) Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf VSD trr Qr total gate charge gate-source charge gate-drain (Miller) charge input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time source-drain (diode forward) voltage reverse recovery time recovered charge IS = 25 A; VGS = 0 V; Figure 14 IS = 20 A; dIS/dt = -100 A/s; VGS = 0 V; VR = 25 V VDD = 75 V; RD = 2.7 ; VGS = 10 V; RG = 5.6 VGS = 0 V; VDS = 25 V; f = 1 MHz; Figure 13 ID = 30 A; VDS = 120 V; VGS = 10 V; Figure 15
Source-drain diode - - -
9397 750 08037
(c) Philips Electronics N.V. 2001. All rights reserved.
Product specification
Rev. 02 -- 12 March 2001
5 of 14
Philips Semiconductors
PHP30NQ15T; PHB30NQ15T
N-channel enhancement mode field-effect transistor
35 ID (A) 30 25
003aaa057
003aaa062
30 ID (A) 25
VGS = 10 V 6V
8V
20 20 15 10 5 0 0 0.4 0.8 1.2 5.4 V 5.2 V 10 5.0 V 4.8 V 4.6 V 4.4 V 1.6 2.0 0 0 1 2 3 4 5 6 7 8 9 10 VGS (V) 5 Tj = 175 oC 15 Tj = 25 oC
VDS (V)
Tj = 25 C
Tj = 25 C and 175 C; VDS > ID x RDSon
Fig 6. Output characteristics: drain current as a function of drain-source voltage; typical values.
Fig 7. Transfer characteristics: drain current as a function of gate-source voltage; typical values.
003aaa061
0.20 RDSon () 0.16 4.8 V 0.12 5.4 V 8.0 V 0.06 6.0 V 0.04 VGS = 10V 4.4 V 4.6 V 5.2 V 5.0 V a
3.0 2.8 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6
003aaa064
0 0 5 10 15 20 25 ID (A) 30
-40
0
40
80
120
160
Tj (oC)
Tj = 25 C
R DSon a = --------------------------R
DSon ( 25 C )
Fig 8. Drain-source on-state resistance as a function of drain current; typical values.
Fig 9. Normalized drain-source on-state resistance factor as a function of junction temperature.
9397 750 08037
(c) Philips Electronics N.V. 2001. All rights reserved.
Product specification
Rev. 02 -- 12 March 2001
6 of 14
Philips Semiconductors
PHP30NQ15T; PHB30NQ15T
N-channel enhancement mode field-effect transistor
003aaa023
4.5
VGS(th) (V)
10-2
ID
003aaa024
4
max
3.5 3
typ
(A) 10-3
min
2.5 2 1.5 1 0.5 0 -60
min
10-4
typ max
10-5
10-6
-20
20
60
100
140 Tj (oC)
180
10-7
1
2
3
4
VGS (V)
5
ID = 1 mA; VDS = VGS
Tj = 25 C
Fig 10. Gate-source threshold voltage as a function of junction temperature.
Fig 11. Sub-threshold drain current as a function of gate-source voltage.
40 gfs (S) 35 30 25 Tj = 175 oC 20 Tj = 25 oC
003aaa063
104 Ciss, Coss, Crss (pF) 103
003aaa065
Ciss
Coss 15 10 5 0 102 Crss
0
5
10
15
20
25 ID (A)
30
10 10-1
1
10
VDS (V)
102
Tj = 25 C and 175 C; VDS > ID x RDSon
VGS = 0 V; f = 1 MHz
Fig 12. Forward transconductance as a function of drain current; typical values.
Fig 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.
9397 750 08037
(c) Philips Electronics N.V. 2001. All rights reserved.
Product specification
Rev. 02 -- 12 March 2001
7 of 14
Philips Semiconductors
PHP30NQ15T; PHB30NQ15T
N-channel enhancement mode field-effect transistor
30 IS (A) 25
003aaa067
003aaa066
14 VGS (V) 12 10 Tj = 175 oC 8 Tj = 25 oC 6 4 VDD = 120 V VDD = 30 V
20
15
10
5
2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (V) 0 10 20 30 40 50 60 QG (nC)
0
Tj = 25 C and 175 C; VGS = 0 V
ID = 30 A; VDD = 30 V and 120 V
Fig 14. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values.
Fig 15. Gate-source voltage as a function of gate charge; typical values.
9397 750 08037
(c) Philips Electronics N.V. 2001. All rights reserved.
Product specification
Rev. 02 -- 12 March 2001
8 of 14
Philips Semiconductors
PHP30NQ15T; PHB30NQ15T
N-channel enhancement mode field-effect transistor
9. Package outline
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78
E p
A A1 q
D1
mounting base
D
L1(1)
L2 Q
L
b1
1
2
3
b c
e
e
0
5 scale
10 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 4.5 4.1 A1 1.39 1.27 b 0.9 0.7 b1 1.3 1.0 c 0.7 0.4 D 15.8 15.2 D1 6.4 5.9 E 10.3 9.7 e 2.54 L 15.0 13.5 L1(1) 3.30 2.79 L2 max. 3.0 p 3.8 3.6 q 3.0 2.7 Q 2.6 2.2
Note 1. Terminals in this zone are not tinned. OUTLINE VERSION SOT78 REFERENCES IEC JEDEC 3-lead TO-220AB EIAJ SC-46 EUROPEAN PROJECTION ISSUE DATE 00-09-07 01-02-16
Fig 16. SOT78
9397 750 08037 (c) Philips Electronics N.V. 2001. All rights reserved.
Product specification
Rev. 02 -- 12 March 2001
9 of 14
Philips Semiconductors
PHP30NQ15T; PHB30NQ15T
N-channel enhancement mode field-effect transistor
Plastic single-ended surface mounted package (Philips version of D2-PAK); 3 leads (one lead cropped)
SOT404
A E A1 mounting base
D1
D
HD
2
Lp
1
3
b c Q
e
e
0
2.5 scale
5 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 4.50 4.10 A1 1.40 1.27 b 0.85 0.60 c 0.64 0.46 D max. 11 D1 1.60 1.20 E 10.30 9.70 e 2.54 Lp 2.90 2.10 HD 15.80 14.80 Q 2.60 2.20
OUTLINE VERSION SOT404
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 99-06-25 01-02-12
Fig 17. SOT404 (D2-PAK).
9397 750 08037 (c) Philips Electronics N.V. 2001. All rights reserved.
Product specification
Rev. 02 -- 12 March 2001
10 of 14
Philips Semiconductors
PHP30NQ15T; PHB30NQ15T
N-channel enhancement mode field-effect transistor
10. Revision history
Table 6: 02 Revision history CPCN Description Product specification; second version; supersedes initial version PHB_PHP30NQ15T_1 of Aug. 1999
Rev Date 20010312
*
01 Aug. 1999 -
Max Qgd value added, Table 1
Product specification; initial version
9397 750 08037
(c) Philips Electronics N.V. 2001. All rights reserved.
Product specification
Rev. 02 -- 12 March 2001
11 of 14
Philips Semiconductors
PHP30NQ15T; PHB30NQ15T
N-channel enhancement mode field-effect transistor
11. Data sheet status
Datasheet status Objective specification Preliminary specification Product status Development Qualification Definition [1] This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product.
Product specification
Production
[1]
Please consult the most recently issued data sheet before initiating or completing a design.
12. Definitions
Short-form specification -- The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition -- Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information -- Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification.
13. Disclaimers
Life support -- These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes -- Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
9397 750 08037
(c) Philips Electronics N.V. 2001 All rights reserved.
Product specification
Rev. 02 -- 12 March 2001
12 of 14
Philips Semiconductors
PHP30NQ15T; PHB30NQ15T
N-channel enhancement mode field-effect transistor
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Internet: http://www.semiconductors.philips.com
(SCA72)
9397 750 08037
(c) Philips Electronics N.V. 2001. All rights reserved.
Product specification
Rev. 02 -- 12 March 2001
13 of 14
Philips Semiconductors
PHP30NQ15T; PHB30NQ15T
N-channel enhancement mode field-effect transistor
Contents
1 2 3 4 5 6 7 7.1 8 9 10 11 12 13 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Transient thermal impedance . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
(c) Philips Electronics N.V. 2001.
Printed in The Netherlands
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 12 March 2001 Document order number: 9397 750 08037

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